Infineon CoolMOS™ Dual Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S4L22ATMA1
- RS Stock No.:
- 222-4680
- Mfr. Part No.:
- IPG20N10S4L22ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£2,140.00
(exc. VAT)
£2,570.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
5000 + | £0.428 | £2,140.00 |
*price indicative
- RS Stock No.:
- 222-4680
- Mfr. Part No.:
- IPG20N10S4L22ATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | SuperSO8 5 x 6 Dual | |
Series | CoolMOS™ | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.022 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.1V | |
Number of Elements per Chip | 2 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SuperSO8 5 x 6 Dual | ||
Series CoolMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.022 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
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