MPN

Infineon N Channel Mosfet OptiMOS 2 Type N-Channel MOSFET, 50 A, 25 V Enhancement, 8-Pin Power Block 5x6 BSG0811NDATMA1

RS Stock No.:: 215-2467
Mfr. Part No.:: BSG0811NDATMA1
Brand:: Infineon

Infineon N Channel Mosfet OptiMOS 2 Type N-Channel MOSFET, 50 A, 25 V Enhancement, 8-Pin Power Block 5x6 BSG0811NDATMA1

Subtotal (1 pack of 10 units)*

£11.12

(exc. VAT)

£13.34

(inc. VAT)

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In Stock

Plus 8,370 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
10 +	£1.112	£11.12

*price indicative

RS Stock No.:: 215-2467
Mfr. Part No.:: BSG0811NDATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	25V
	Package Type	Power Block 5x6
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.84V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	4.5 V
	Maximum Power Dissipation Pd	6.25W
	Typical Gate Charge Qg @ Vgs	8.4nC
	Maximum Operating Temperature	150°C
	Transistor Configuration	N Channel Mosfet
	Width	6.1 mm
	Length	5.1mm
	Height	1.1mm
	Standards/Approvals	JEDEC, RoHS, IEC61249-2-21
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 25V
	Package Type Power Block 5x6
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.84V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 4.5 V
	Maximum Power Dissipation Pd 6.25W
	Typical Gate Charge Qg @ Vgs 8.4nC
	Maximum Operating Temperature 150°C
	Transistor Configuration N Channel Mosfet
	Width 6.1 mm
	Length 5.1mm
	Height 1.1mm
	Standards/Approvals JEDEC, RoHS, IEC61249-2-21
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet - BSG0811NDATMA1

The Infineon OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.

50A max average load current

Source-down low side MOSFET for better PCB cooling

Internally connected low-side and high side (lowest loop inductance)

High side Kelvin connection for more efficient driving