Infineon CoolMOS™ CE N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK IPD50R650CEAUMA1
- RS Stock No.:
- 214-9039
- Mfr. Part No.:
- IPD50R650CEAUMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£475.00
(exc. VAT)
£575.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.19 | £475.00 |
*price indicative
- RS Stock No.:
- 214-9039
- Mfr. Part No.:
- IPD50R650CEAUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 9 A | |
Maximum Drain Source Voltage | 500 V | |
Package Type | TO-252 | |
Series | CoolMOS™ CE | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.65 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-252 | ||
Series CoolMOS™ CE | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.65 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Easy to use/drive
Very high commutation ruggedness
Qualified for standard grade applications
Very high commutation ruggedness
Qualified for standard grade applications
Related links
- Infineon CoolMOS™ CE N-Channel MOSFET 500 V, 3-Pin DPAK IPD50R650CEAUMA1
- onsemi QFET N-Channel MOSFET 500 V, 3-Pin TO-220F FQPF9N50CF
- Infineon CoolMOS™ CE N-Channel MOSFET 500 V, 3-Pin DPAK IPD50R500CEAUMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 500 V, 3-Pin DPAK IPD50R1K4CEAUMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 500 V, 3-Pin DPAK IPD50R2K0CEAUMA1
- Infineon N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R360P7SAUMA1
- ROHM N-Channel MOSFET 650 V, 3-Pin DPAK R6509END3TL1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin DPAK IPD60R360P7ATMA1