Infineon CoolMOS™ CE N-Channel MOSFET, 9 A, 550 V, 3-Pin SOT-223 IPN50R650CEATMA1
- RS Stock No.:
- 130-0914
- Mfr. Part No.:
- IPN50R650CEATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£13.575
(exc. VAT)
£16.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,450 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.543 | £13.575 |
| 125 - 225 | £0.434 | £10.85 |
| 250 - 600 | £0.402 | £10.05 |
| 625 - 1225 | £0.375 | £9.375 |
| 1250 + | £0.348 | £8.70 |
*price indicative
- RS Stock No.:
- 130-0914
- Mfr. Part No.:
- IPN50R650CEATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 550 V | |
| Package Type | SOT-223 | |
| Series | CoolMOS™ CE | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 650 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 5 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Length | 6.7mm | |
| Number of Elements per Chip | 1 | |
| Width | 3.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.7mm | |
| Forward Diode Voltage | 0.84V | |
| Minimum Operating Temperature | -40 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 550 V | ||
Package Type SOT-223 | ||
Series CoolMOS™ CE | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 650 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 5 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Length 6.7mm | ||
Number of Elements per Chip 1 | ||
Width 3.7mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1.7mm | ||
Forward Diode Voltage 0.84V | ||
Minimum Operating Temperature -40 °C | ||
Related links
- Infineon CoolMOS™ CE N-Channel MOSFET 550 V, 3-Pin SOT-223 IPN50R650CEATMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 550 V, 3-Pin SOT-223 IPN50R1K4CEATMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 550 V, 3-Pin SOT-223 IPN50R950CEATMA1
- Infineon N-Channel MOSFET 600 V, 3-Pin SOT-223 IPN60R360P7SATMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 550 V, 3-Pin DPAK IPD50R380CEAUMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 550 V, 3-Pin TO-220 IPP50R190CEXKSA1
- Infineon CoolMOS™ CE N-Channel MOSFET 550 V, 3-Pin TO-220 IPA50R280CEXKSA2
- Infineon CoolMOS™ CE N-Channel MOSFET 550 V, 3-Pin TO-220 IPP50R380CEXKSA1