Infineon CoolMOS™ CE N-Channel MOSFET, 9 A, 550 V, 3-Pin SOT-223 IPN50R650CEATMA1

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Packaging Options:
RS Stock No.:
130-0914
Mfr. Part No.:
IPN50R650CEATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

550 V

Package Type

SOT-223

Series

CoolMOS™ CE

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

650 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

5 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

3.7mm

Length

6.7mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.84V

Height

1.7mm

Infineon CoolMOS™ CE Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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