Infineon CoolMOS™ CE N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK IPD80R1K4CEATMA1

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Subtotal (1 reel of 2500 units)*

£995.00

(exc. VAT)

£1,195.00

(inc. VAT)

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  • 2,500 unit(s) ready to ship
  • Plus 999,995,000 unit(s) shipping from 23 January 2026
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2500 +£0.398£995.00

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RS Stock No.:
214-4395
Mfr. Part No.:
IPD80R1K4CEATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.9V

Number of Elements per Chip

1

This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.

It is RoHS compliant

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