Infineon CoolMOS™ CE N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK IPD80R1K0CEATMA1

Subtotal (1 reel of 2500 units)*

£1,165.00

(exc. VAT)

£1,397.50

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 23 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +£0.466£1,165.00

*price indicative

RS Stock No.:
165-8015
Mfr. Part No.:
IPD80R1K0CEATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.7 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

31 nC @ 10 V

Length

6.73mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

6.22mm

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

RoHS Status: Not Applicable

COO (Country of Origin):
MY

Infineon CoolMOS™ CE Power MOSFET


Infineon CoolMOS™ CE Series MOSFET, 5.7A Maximum Continuous Drain Current, 83W Maximum Power Dissipation - IPD80R1K0CEATMA1


This MOSFET provides solutions for power management and general electronics, leveraging advanced CoolMOS CE technology with high voltage capabilities up to 800V. It boasts high efficiency and low on-state resistance, optimising design while enhancing reliability.

Features & Benefits


• Increased power density allows for more compact system designs
• Reduced cooling requirements lead to cost savings for systems
• Lower operating temperatures enhance system reliability
• High peak current capability supports rigorous applications
• Reliable dv/dt rating ensures stability under rapid voltage changes
• Complies with RoHS standards for environmentally sound use

Applications


• Used in LED lighting solutions for retrofit installations
• Suitable for QR flyback topology in power supplies
• Effective within automotive power distribution systems
• Ideal for various high-voltage industrial

How does the MOSFET enhance system performance in power management?


It improves power density and reduces thermal requirements, leading to enhanced efficiency and lower energy losses during operation.

What are the benefits of using this device in LED lighting applications?


It delivers dependable performance with less heat generation, contributing to longevity and stability in lighting systems.

Is this compatible with high-frequency applications?


Yes, its low gate charge and high peak current capabilities make it apt for high-frequency operations, ensuring minimal switching losses.

What is the maximum continuous drain current for this device?


The maximum continuous drain current is rated at 5.7A, making it suitable for various power-intensive applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links