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Infineon CoolMOS™ CE N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK IPD80R1K0CEATMA1

RS Stock No.:: 914-0223
Mfr. Part No.:: IPD80R1K0CEATMA1
Brand:: Infineon

Infineon CoolMOS™ CE N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK IPD80R1K0CEATMA1

Subtotal (1 pack of 10 units)*

£8.00

(exc. VAT)

£9.60

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,280 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 +	£0.80	£8.00

*price indicative

RS Stock No.:: 914-0223
Mfr. Part No.:: IPD80R1K0CEATMA1
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	5.7 A
	Maximum Drain Source Voltage	800 V
	Package Type	DPAK (TO-252)
	Series	CoolMOS™ CE
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	950 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.9V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	83 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	6.22mm
	Length	6.73mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	31 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Height	2.41mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 5.7 A
	Maximum Drain Source Voltage 800 V
	Package Type DPAK (TO-252)
	Series CoolMOS™ CE
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 950 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.9V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 83 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 6.22mm
	Length 6.73mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 31 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Height 2.41mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

Infineon CoolMOS™ CE Power MOSFET

Infineon CoolMOS™ CE Series MOSFET, 5.7A Maximum Continuous Drain Current, 83W Maximum Power Dissipation - IPD80R1K0CEATMA1

This MOSFET provides solutions for power management and general electronics, leveraging advanced CoolMOS CE technology with high voltage capabilities up to 800V. It boasts high efficiency and low on-state resistance, optimising design while enhancing reliability.

Features & Benefits

• Increased power density allows for more compact system designs
• Reduced cooling requirements lead to cost savings for systems
• Lower operating temperatures enhance system reliability
• High peak current capability supports rigorous applications
• Reliable dv/dt rating ensures stability under rapid voltage changes
• Complies with RoHS standards for environmentally sound use

Applications

• Used in LED lighting solutions for retrofit installations
• Suitable for QR flyback topology in power supplies
• Effective within automotive power distribution systems
• Ideal for various high-voltage industrial

How does the MOSFET enhance system performance in power management?

It improves power density and reduces thermal requirements, leading to enhanced efficiency and lower energy losses during operation.

What are the benefits of using this device in LED lighting applications?

It delivers dependable performance with less heat generation, contributing to longevity and stability in lighting systems.

Is this compatible with high-frequency applications?

Yes, its low gate charge and high peak current capabilities make it apt for high-frequency operations, ensuring minimal switching losses.

What is the maximum continuous drain current for this device?

The maximum continuous drain current is rated at 5.7A, making it suitable for various power-intensive applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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