Infineon CoolMOS™ CE N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK IPD60R1K0CEAUMA1

RS Stock No.:: 168-5910
Mfr. Part No.:: IPD60R1K0CEAUMA1
Brand:: Infineon

Infineon CoolMOS™ CE N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK IPD60R1K0CEAUMA1

Subtotal (1 reel of 2500 units)*

£372.50

(exc. VAT)

£447.50

(inc. VAT)

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Shipping from 13 February 2026

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Units	Per unit	Per Reel*
2500 +	£0.149	£372.50

*price indicative

RS Stock No.:: 168-5910
Mfr. Part No.:: IPD60R1K0CEAUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	6.8 A
	Maximum Drain Source Voltage	650 V
	Package Type	DPAK (TO-252)
	Series	CoolMOS™ CE
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	1 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	61 W
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	6.22mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	13 nC @ 10 V
	Length	6.73mm
	Number of Elements per Chip	1
	Height	2.41mm
	Minimum Operating Temperature	-40 °C
	Forward Diode Voltage	0.9V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 6.8 A
	Maximum Drain Source Voltage 650 V
	Package Type DPAK (TO-252)
	Series CoolMOS™ CE
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 1 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 61 W
	Maximum Gate Source Voltage -30 V, +30 V
	Width 6.22mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 13 nC @ 10 V
	Length 6.73mm
	Number of Elements per Chip 1
	Height 2.41mm
	Minimum Operating Temperature -40 °C
	Forward Diode Voltage 0.9V

COO (Country of Origin):: CN

Infineon CoolMOS™ CE Power MOSFET

Infineon CoolMOS™ CE Series MOSFET, 6.8A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IPD60R1K0CEAUMA1

This high-voltage MOSFET is designed to improve performance in various power applications. It is suitable for systems requiring robust switching capabilities and serves sectors such as automation and electronics. The CoolMOS technology employs superjunction principles, ensuring efficiency and reliability under diverse operating conditions.

Features & Benefits

• Reduction in switching and conduction losses enhances efficiency
• Robust body diode withstands hard commutation for increased reliability
• Low gate charge characteristics simplify driver requirements during operation
• Enhanced ESD robustness promotes durability in challenging environments
• Suitable for both hard and soft switching applications optimises performance

Applications

• Utilised in power factor correction stages for effective energy management
• Employed in hard switching PWM stages for efficient power conversion and control
• Integrates seamlessly within resonant switching stages across various device
• Suitable for multiple sectors including lighting, servers, and telecom equipment

How does the switching behaviour impact energy efficiency during operation?

Switching behaviour is important as lower switching losses contribute to higher overall efficiency, leading to cooler operation and reduced heat generation, which supports system longevity.

What protective measures are recommended during installation?

Using ferrite beads on gates or separate totem poles is advisable to reduce ringing and ensure stable operation during switching.

Can it operate effectively under extreme temperature conditions?

The MOSFET is rated for operation between -40°C and +150°C, enabling reliable functionality in various environmental conditions.

What considerations should be taken when paralleling multiple devices?

For effective paralleling, proper gate drive techniques should be employed to achieve balanced current distribution among the devices and optimise performance.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.