Infineon CoolMOS™ CE N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK IPD60R1K0CEAUMA1

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£372.50

(exc. VAT)

£447.50

(inc. VAT)

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Per Reel*
2500 +£0.149£372.50

*price indicative

RS Stock No.:
168-5910
Mfr. Part No.:
IPD60R1K0CEAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

61 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

6.22mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

13 nC @ 10 V

Length

6.73mm

Height

2.41mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.9V

COO (Country of Origin):
CN

Infineon CoolMOS™ CE Power MOSFET


Infineon CoolMOS™ CE Series MOSFET, 6.8A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IPD60R1K0CEAUMA1


This high-voltage MOSFET is designed to improve performance in various power applications. It is suitable for systems requiring robust switching capabilities and serves sectors such as automation and electronics. The CoolMOS technology employs superjunction principles, ensuring efficiency and reliability under diverse operating conditions.

Features & Benefits


• Reduction in switching and conduction losses enhances efficiency
• Robust body diode withstands hard commutation for increased reliability
• Low gate charge characteristics simplify driver requirements during operation
• Enhanced ESD robustness promotes durability in challenging environments
• Suitable for both hard and soft switching applications optimises performance

Applications


• Utilised in power factor correction stages for effective energy management
• Employed in hard switching PWM stages for efficient power conversion and control
• Integrates seamlessly within resonant switching stages across various device
• Suitable for multiple sectors including lighting, servers, and telecom equipment

How does the switching behaviour impact energy efficiency during operation?


Switching behaviour is important as lower switching losses contribute to higher overall efficiency, leading to cooler operation and reduced heat generation, which supports system longevity.

What protective measures are recommended during installation?


Using ferrite beads on gates or separate totem poles is advisable to reduce ringing and ensure stable operation during switching.

Can it operate effectively under extreme temperature conditions?


The MOSFET is rated for operation between -40°C and +150°C, enabling reliable functionality in various environmental conditions.

What considerations should be taken when paralleling multiple devices?


For effective paralleling, proper gate drive techniques should be employed to achieve balanced current distribution among the devices and optimise performance.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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