Infineon CoolMOS™ CE N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK IPD60R1K0CEAUMA1
- RS Stock No.:
- 168-5910
- Mfr. Part No.:
- IPD60R1K0CEAUMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£372.50
(exc. VAT)
£447.50
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 23 January 2026
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.149 | £372.50 |
*price indicative
- RS Stock No.:
- 168-5910
- Mfr. Part No.:
- IPD60R1K0CEAUMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 6.8 A | |
Maximum Drain Source Voltage | 650 V | |
Series | CoolMOS™ CE | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 61 W | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Number of Elements per Chip | 1 | |
Width | 6.22mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 13 nC @ 10 V | |
Length | 6.73mm | |
Height | 2.41mm | |
Minimum Operating Temperature | -40 °C | |
Forward Diode Voltage | 0.9V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.8 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ CE | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 61 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V | ||
Length 6.73mm | ||
Height 2.41mm | ||
Minimum Operating Temperature -40 °C | ||
Forward Diode Voltage 0.9V | ||
- COO (Country of Origin):
- CN
Infineon CoolMOS™ CE Power MOSFET
Infineon CoolMOS™ CE Series MOSFET, 6.8A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IPD60R1K0CEAUMA1
Features & Benefits
• Robust body diode withstands hard commutation for increased reliability
• Low gate charge characteristics simplify driver requirements during operation
• Enhanced ESD robustness promotes durability in challenging environments
• Suitable for both hard and soft switching applications optimises performance
Applications
• Employed in hard switching PWM stages for efficient power conversion and control
• Integrates seamlessly within resonant switching stages across various device
• Suitable for multiple sectors including lighting, servers, and telecom equipment
How does the switching behaviour impact energy efficiency during operation?
What protective measures are recommended during installation?
Can it operate effectively under extreme temperature conditions?
What considerations should be taken when paralleling multiple devices?
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