Infineon CoolMOS™ CE N-Channel MOSFET, 9 A, 500 V, 3-Pin DPAK IPD50R650CEAUMA1

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Subtotal (1 pack of 25 units)*

£14.325

(exc. VAT)

£17.20

(inc. VAT)

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  • 2,500 unit(s) ready to ship
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Units
Per unit
Per Pack*
25 - 100£0.573£14.33
125 - 225£0.544£13.60
250 - 600£0.533£13.33
625 - 1225£0.499£12.48
1250 +£0.464£11.60

*price indicative

Packaging Options:
RS Stock No.:
214-9041
Mfr. Part No.:
IPD50R650CEAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

500 V

Package Type

TO-252

Series

CoolMOS™ CE

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.65 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive
Very high commutation ruggedness
Qualified for standard grade applications

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