Infineon CoolMOS CE Type N-Channel MOSFET, 9 A, 500 V Enhancement, 3-Pin TO-252 IPD50R650CEAUMA1

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Subtotal (1 pack of 25 units)*

£12.725

(exc. VAT)

£15.275

(inc. VAT)

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Temporarily out of stock
  • 2,500 unit(s) shipping from 01 June 2026
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Units
Per unit
Per Pack*
25 - 100£0.509£12.73
125 - 225£0.483£12.08
250 - 600£0.473£11.83
625 - 1225£0.443£11.08
1250 +£0.412£10.30

*price indicative

Packaging Options:
RS Stock No.:
214-9041
Mfr. Part No.:
IPD50R650CEAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

500V

Series

CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.84V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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