Infineon HEXFET N-Channel MOSFET, 250 A, 40 V, 3-Pin D2PAK AUIRFS8407TRL

Subtotal (1 reel of 800 units)*

£1,075.20

(exc. VAT)

£1,290.40

(inc. VAT)

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800 +£1.344£1,075.20

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RS Stock No.:
214-8960
Mfr. Part No.:
AUIRFS8407TRL
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

250 A

Maximum Drain Source Voltage

40 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0018 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology
New Ultra Low On-Resistance
Automotive Qualified

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