Infineon HEXFET N-Channel MOSFET, 127 A, 100 V, 3-Pin D2PAK IRFS4310ZTRLPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

127 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Width

11.3mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

120 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V