Infineon HEXFET N-Channel MOSFET, 61 A, 100 V, 3-Pin D2PAK IRFS4510TRLPBF
- RS Stock No.:
- 168-6018
- Mfr. Part No.:
- IRFS4510TRLPBF
- Brand:
- Infineon
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Subtotal (1 reel of 800 units)*
£596.00
(exc. VAT)
£715.20
(inc. VAT)
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- Shipping from 09 February 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | £0.745 | £596.00 |
| 1600 + | £0.708 | £566.40 |
*price indicative
- RS Stock No.:
- 168-6018
- Mfr. Part No.:
- IRFS4510TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 61 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 13.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 140 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 9.65mm | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Height | 4.83mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 61 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 13.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 9.65mm | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 4.83mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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