Wolfspeed SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 C3M0075120D

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RS Stock No.:
192-3523
Mfr. Part No.:
C3M0075120D
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Transistor Material

SiC

Typical Gate Charge @ Vgs

54 nC @ 4/15V

Length

16.13mm

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

21.1mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications. Download our LTspice models to get started or click here to request more information.

Minimum of 1200V Vbr across entire operating temperature range
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive

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