Wolfspeed C3M SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 C3M0065100K

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Subtotal (1 tube of 30 units)*

£465.57

(exc. VAT)

£558.69

(inc. VAT)

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30 +£15.519£465.57

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RS Stock No.:
168-4886
Mfr. Part No.:
C3M0065100K
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247-4

Series

C3M

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Maximum Gate Source Voltage

-8 V, +19 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Width

5.21mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

35 nC @ 15 V, 35 nC @ 4 V

Length

16.13mm

Height

23.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

COO (Country of Origin):
CN

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.


New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery


MOSFET Transistors, Cree Inc.

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