Wolfspeed C3M SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 C3M0065100K
- RS Stock No.:
- 125-3453P
- Mfr. Part No.:
- C3M0065100K
- Brand:
- Wolfspeed
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£384.75
(exc. VAT)
£461.75
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,271 unit(s), ready to ship
Units | Per unit |
|---|---|
| 25 - 74 | £15.39 |
| 75 - 149 | £14.97 |
| 150 + | £14.62 |
*price indicative
- RS Stock No.:
- 125-3453P
- Mfr. Part No.:
- C3M0065100K
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Series | C3M | |
| Package Type | TO-247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 1.8V | |
| Maximum Power Dissipation | 113.5 W | |
| Maximum Gate Source Voltage | -8 V, +19 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 5.21mm | |
| Length | 16.13mm | |
| Transistor Material | SiC | |
| Typical Gate Charge @ Vgs | 35 nC @ 15 V, 35 nC @ 4 V | |
| Forward Diode Voltage | 4.8V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 23.6mm | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 1000 V | ||
Series C3M | ||
Package Type TO-247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 113.5 W | ||
Maximum Gate Source Voltage -8 V, +19 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 5.21mm | ||
Length 16.13mm | ||
Transistor Material SiC | ||
Typical Gate Charge @ Vgs 35 nC @ 15 V, 35 nC @ 4 V | ||
Forward Diode Voltage 4.8V | ||
Minimum Operating Temperature -55 °C | ||
Height 23.6mm | ||
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
MOSFET Transistors, Cree Inc.