Wolfspeed C3M SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK C3M0120100J

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Subtotal (1 tube of 50 units)*

£492.55

(exc. VAT)

£591.05

(inc. VAT)

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  • 650 unit(s) ready to ship
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Units
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Per Tube*
50 - 100£9.851£492.55
150 - 200£9.467£473.35
250 +£9.241£462.05

*price indicative

RS Stock No.:
150-3947
Mfr. Part No.:
C3M0120100J
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-263-7

Series

C3M

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+15 V, +9 V

Maximum Operating Temperature

+150 °C

Length

10.23mm

Typical Gate Charge @ Vgs

21.5 @ 4/+15 V

Width

9.12mm

Number of Elements per Chip

1

Transistor Material

SiC

Height

4.32mm

Forward Diode Voltage

4.8V

Minimum Operating Temperature

-55 °C

Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses.

Minimum of 1kV Vbr across entire operating temperature range
low source inductance package with separate driver source pin
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive

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