Wolfspeed C3M SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK C3M0120100J
- RS Stock No.:
- 150-3947
- Mfr. Part No.:
- C3M0120100J
- Brand:
- Wolfspeed
Bulk discount available
Subtotal (1 tube of 50 units)*
£492.55
(exc. VAT)
£591.05
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 650 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | £9.851 | £492.55 |
| 150 - 200 | £9.467 | £473.35 |
| 250 + | £9.241 | £462.05 |
*price indicative
- RS Stock No.:
- 150-3947
- Mfr. Part No.:
- C3M0120100J
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 22 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Package Type | TO-263-7 | |
| Series | C3M | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 170 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 1.8V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +15 V, +9 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.23mm | |
| Typical Gate Charge @ Vgs | 21.5 @ 4/+15 V | |
| Width | 9.12mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
| Height | 4.32mm | |
| Forward Diode Voltage | 4.8V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 1000 V | ||
Package Type TO-263-7 | ||
Series C3M | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 170 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +15 V, +9 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.23mm | ||
Typical Gate Charge @ Vgs 21.5 @ 4/+15 V | ||
Width 9.12mm | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
Height 4.32mm | ||
Forward Diode Voltage 4.8V | ||
Minimum Operating Temperature -55 °C | ||
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses.
Minimum of 1kV Vbr across entire operating temperature range
low source inductance package with separate driver source pin
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
low source inductance package with separate driver source pin
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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