Wolfspeed SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK C3M0075120J

Subtotal (1 tube of 50 units)*

£603.75

(exc. VAT)

£724.50

(inc. VAT)

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RS Stock No.:
192-3373
Mfr. Part No.:
C3M0075120J
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Width

9.12mm

Number of Elements per Chip

1

Length

10.23mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

48 nC @ 4/15V

Transistor Material

SiC

Minimum Operating Temperature

-55 °C

Height

4.57mm

Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.

Minimum of 1200V Vbr across entire operating temperature range
New low-impedance package with driver source
> 7mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive

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