Wolfspeed SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK C3M0280090J

View all MOSFETs
Bulk discount available

Subtotal (1 tube of 50 units)*

£233.80

(exc. VAT)

£280.55

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,700 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 - 50£4.676£233.80
100 +£4.559£227.95

*price indicative

RS Stock No.:
192-3382
Mfr. Part No.:
C3M0280090J
Brand:
Wolfspeed
Find similar products by selecting one or more attributes.
Select all

Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Typical Gate Charge @ Vgs

9.5 nC @ 4/15V

Length

10.23mm

Width

9.12mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Minimum Operating Temperature

-55 °C

Height

4.57mm

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

New low-impedance package with driver source
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive

Related links