Wolfspeed SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK C3M0280090J

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£233.80

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£280.55

(inc. VAT)

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50 - 50£4.676£233.80
100 +£4.559£227.95

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RS Stock No.:
192-3382
Mfr. Part No.:
C3M0280090J
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Width

9.12mm

Length

10.23mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

9.5 nC @ 4/15V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Minimum Operating Temperature

-55 °C

Height

4.57mm

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

New low-impedance package with driver source
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive

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