Wolfspeed SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin TO-247-4 C3M0075120K
- RS Stock No.:
- 192-3375
- Mfr. Part No.:
- C3M0075120K
- Brand:
- Wolfspeed
Subtotal (1 tube of 30 units)*
£360.96
(exc. VAT)
£433.14
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 17 April 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £12.032 | £360.96 |
*price indicative
- RS Stock No.:
- 192-3375
- Mfr. Part No.:
- C3M0075120K
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 75 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.6V | |
| Minimum Gate Threshold Voltage | 1.8V | |
| Maximum Power Dissipation | 113.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, 19 V | |
| Width | 5.21mm | |
| Length | 16.13mm | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 53 nC @ 4/15V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 23.6mm | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.6V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 113.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, 19 V | ||
Width 5.21mm | ||
Length 16.13mm | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 53 nC @ 4/15V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 23.6mm | ||
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Minimum of 1200V Vbr across entire operating temperature range
New low-impedance package with driver source
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
New low-impedance package with driver source
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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