Wolfspeed SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 C3M0280090D

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Subtotal (1 tube of 30 units)*

£134.46

(exc. VAT)

£161.34

(inc. VAT)

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Per Tube*
30 - 120£4.482£134.46
150 - 270£4.365£130.95
300 +£4.258£127.74

*price indicative

RS Stock No.:
162-9714
Mfr. Part No.:
C3M0280090D
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

900 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +18 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

16.13mm

Width

21.1mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

9.5 nC @ 15 V

Height

5.21mm

Forward Diode Voltage

4.8V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Wolfspeed Silicon Carbide Power MOSFETs


Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation


MOSFET Transistors, Wolfspeed

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