Wolfspeed SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 C3M0280090D
- RS Stock No.:
- 915-8842
- Mfr. Part No.:
- C3M0280090D
- Brand:
- Wolfspeed
Bulk discount available
Subtotal (1 pack of 2 units)*
£9.47
(exc. VAT)
£11.364
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 42 unit(s) ready to ship
- Plus 6 unit(s) ready to ship from another location
- Plus 686 unit(s) shipping from 09 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £4.735 | £9.47 |
| 10 - 28 | £4.44 | £8.88 |
| 30 - 58 | £4.315 | £8.63 |
| 60 - 118 | £4.215 | £8.43 |
| 120 + | £4.10 | £8.20 |
*price indicative
- RS Stock No.:
- 915-8842
- Mfr. Part No.:
- C3M0280090D
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11.5 A | |
| Maximum Drain Source Voltage | 900 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 360 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 1.8V | |
| Maximum Power Dissipation | 54 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +18 V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
| Length | 16.13mm | |
| Typical Gate Charge @ Vgs | 9.5 nC @ 15 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 4.8V | |
| Height | 5.21mm | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.5 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 360 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 54 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +18 V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
Length 16.13mm | ||
Typical Gate Charge @ Vgs 9.5 nC @ 15 V | ||
Maximum Operating Temperature +150 °C | ||
Width 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 4.8V | ||
Height 5.21mm | ||
- COO (Country of Origin):
- CN
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
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