Wolfspeed SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 C3M0075120D
- RS Stock No.:
- 192-3376
- Mfr. Part No.:
- C3M0075120D
- Brand:
- Wolfspeed
Subtotal (1 tube of 30 units)*
£376.50
(exc. VAT)
£451.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 120 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £12.55 | £376.50 |
*price indicative
- RS Stock No.:
- 192-3376
- Mfr. Part No.:
- C3M0075120D
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 75 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 1.7V | |
| Maximum Power Dissipation | 113.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, 19 V | |
| Width | 5.21mm | |
| Length | 16.13mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 54 nC @ 4/15V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | SiC | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.1mm | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 75 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 1.7V | ||
Maximum Power Dissipation 113.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, 19 V | ||
Width 5.21mm | ||
Length 16.13mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 54 nC @ 4/15V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material SiC | ||
Minimum Operating Temperature -55 °C | ||
Height 21.1mm | ||
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications. Download our LTspice models to get started or click here to request more information.
Minimum of 1200V Vbr across entire operating temperature range
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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