Vishay TrenchFET N-Channel MOSFET, 2.1 A, 60 V, 3-Pin SOT-23 SI2308BDS-T1-E3
- RS Stock No.:
- 180-7271
- Mfr. Part No.:
- SI2308BDS-T1-E3
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 180-7271
- Mfr. Part No.:
- SI2308BDS-T1-E3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 2.1 A | |
Maximum Drain Source Voltage | 60 V | |
Series | TrenchFET | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.192 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.1 A | ||
Maximum Drain Source Voltage 60 V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.192 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 156mohm at a gate-source voltage of 10V. It has a maximum power rating of 1.66W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Battery Switch
• DC/DC Converter
• DC/DC Converter
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
Related links
- Vishay TrenchFET N-Channel MOSFET 60 V, 3-Pin SOT-23 SI2308BDS-T1-E3
- Vishay N-Channel MOSFET 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3
- Vishay TrenchFET P-Channel MOSFET 20 V, 3-Pin SOT-23 SI2301CDS-T1-E3
- Vishay TrenchFET N-Channel MOSFET 60 V, 8-Pin SO-8 SI4900DY-T1-E3
- Vishay TrenchFET N-Channel MOSFET 80 V, 8-Pin SO-8 SI4896DY-T1-E3
- Vishay TrenchFET N-Channel MOSFET 100 V, 3-Pin SOT-23 SI2392ADS-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V, 3-Pin SOT-23 SI2300DS-T1-GE3
- Vishay N-Channel MOSFET 100 V, 3-Pin SOT-23 SI2328DS-T1-E3