Vishay TrenchFET P-Channel MOSFET, 3.1 A, 20 V, 3-Pin SOT-23 SI2301CDS-T1-E3
- RS Stock No.:
- 180-7719
- Mfr. Part No.:
- SI2301CDS-T1-E3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 25 units)*
£7.20
(exc. VAT)
£8.65
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 400 unit(s) ready to ship
- Plus 999,999,575 unit(s) shipping from 19 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
25 - 225 | £0.288 | £7.20 |
250 - 600 | £0.283 | £7.08 |
625 - 1225 | £0.196 | £4.90 |
1250 - 2475 | £0.148 | £3.70 |
2500 + | £0.127 | £3.18 |
*price indicative
- RS Stock No.:
- 180-7719
- Mfr. Part No.:
- SI2301CDS-T1-E3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 3.1 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | SOT-23 | |
Series | TrenchFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.112 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.1 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.112 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 8V. It has drain-source resistance of 112mohm at a gate-source voltage of 4.5V. It has continuous drain current of 3.1A and maximum power dissipation of 1.6W. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• BS EN 61340-5-1:2007
• IEC 61249-2-21
Related links
- Vishay TrenchFET P-Channel MOSFET 20 V, 3-Pin SOT-23 SI2301CDS-T1-E3
- Vishay P-Channel MOSFET 20 V, 3-Pin SOT-23 SI2301CDS-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 100 V, 3-Pin SOT-23 SI2392ADS-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 60 V, 3-Pin SOT-23 SI2308BDS-T1-E3
- Vishay TrenchFET P-Channel MOSFET 30 V, 3-Pin SOT-23 SI2307CDS-T1-GE3
- Vishay TrenchFET P-Channel MOSFET 20 V, 3-Pin SOT-23 SI2399DS-T1-GE3
- Vishay TrenchFET P-Channel MOSFET 30 V, 3-Pin SOT-23 SI2347DS-T1-GE3
- Vishay TrenchFET P-Channel MOSFET 30 V, 3-Pin SOT-23 SI2369DS-T1-GE3