Vishay TrenchFET Type N-Channel Power MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-E3

RS Stock No.:: 180-7752
Mfr. Part No.:: SI2308BDS-T1-E3
Brand:: Vishay

Vishay TrenchFET Type N-Channel Power MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-E3

Subtotal (1 pack of 20 units)*

£7.06

(exc. VAT)

£8.48

(inc. VAT)

FREE delivery for orders over £50.00

Being discontinued

Final 1,820 unit(s), ready to ship

Units	Per unit	Per Pack*
20 +	£0.353	£7.06

*price indicative

RS Stock No.:: 180-7752
Mfr. Part No.:: SI2308BDS-T1-E3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.192Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	2.3nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.66W
	Maximum Operating Temperature	150°C
	Height	1.12mm
	Length	3.04mm
	Width	2.64 mm
	Standards/Approvals	IEC 61249-2-21
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.192Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 2.3nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.66W
	Maximum Operating Temperature 150°C
	Height 1.12mm
	Length 3.04mm
	Width 2.64 mm
	Standards/Approvals IEC 61249-2-21
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 156mohm at a gate-source voltage of 10V. It has a maximum power rating of 1.66W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Battery Switch

• DC/DC Converter

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested