Vishay TrenchFET N-Channel MOSFET, 2.1 A, 60 V, 3-Pin SOT-23 SI2308BDS-T1-E3

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Subtotal (1 pack of 20 units)*

£7.06

(exc. VAT)

£8.48

(inc. VAT)

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Being discontinued
  • Final 1,820 unit(s), ready to ship
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20 +£0.353£7.06

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Packaging Options:
RS Stock No.:
180-7752
Mfr. Part No.:
SI2308BDS-T1-E3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.192 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Number of Elements per Chip

1

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 156mohm at a gate-source voltage of 10V. It has a maximum power rating of 1.66W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• Battery Switch
• DC/DC Converter

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested

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