Vishay N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3

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Subtotal (1 pack of 20 units)*

£7.54

(exc. VAT)

£9.04

(inc. VAT)

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Being discontinued
  • 40 left, ready to ship
  • Final 1,220 unit(s) shipping from 29 October 2025
Units
Per unit
Per Pack*
20 - 180£0.377£7.54
200 - 480£0.284£5.68
500 - 980£0.264£5.28
1000 - 1980£0.227£4.54
2000 +£0.188£3.76

*price indicative

Packaging Options:
RS Stock No.:
710-3257
Mfr. Part No.:
SI2308BDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

156 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.09 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Width

1.4mm

Height

1.02mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

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