Vishay Si2308BDS Type N-Channel Power MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-GE3

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Subtotal (1 pack of 20 units)*

£7.54

(exc. VAT)

£9.04

(inc. VAT)

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Being discontinued
  • 40 left, ready to ship
  • Final 540 unit(s) shipping from 02 January 2026
Units
Per unit
Per Pack*
20 - 180£0.377£7.54
200 - 480£0.284£5.68
500 - 980£0.264£5.28
1000 - 1980£0.227£4.54
2000 +£0.188£3.76

*price indicative

Packaging Options:
RS Stock No.:
710-3257
Mfr. Part No.:
SI2308BDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

Si2308BDS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.192Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

2.3nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.66W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Width

1.4 mm

Height

1.02mm

Length

3.04mm

Standards/Approvals

IEC 61249-2-21

Automotive Standard

No

COO (Country of Origin):
CN

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