Vishay N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3

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Subtotal (1 reel of 3000 units)*

£384.00

(exc. VAT)

£462.00

(inc. VAT)

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Being discontinued
  • Final 21,000 unit(s), ready to ship
Units
Per unit
Per Reel*
3000 +£0.128£384.00

*price indicative

RS Stock No.:
919-0266
Mfr. Part No.:
SI2308BDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

156 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.09 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.04mm

Typical Gate Charge @ Vgs

2.3 nC @ 4.5 V, 4.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

1.4mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

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