Vishay Si2308BDS Type N-Channel Power MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23

View all MOSFETs
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
919-0266
Mfr. Part No.:
SI2308BDS-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

60V

Series

Si2308BDS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.192Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

2.3nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

1.66W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21

Length

3.04mm

Height

1.02mm

Width

1.4 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links