Vishay P-Channel MOSFET, 2.2 A, 20 V, 3-Pin SOT-23 SI2367DS-T1-GE3

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Subtotal (1 tape of 50 units)*

£15.85

(exc. VAT)

£19.00

(inc. VAT)

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Per Tape*
50 +£0.317£15.85

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Packaging Options:
RS Stock No.:
812-3136
Mfr. Part No.:
SI2367DS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Length

3.04mm

Width

1.4mm

Typical Gate Charge @ Vgs

15 nC @ 8 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

1.02mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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