Vishay Siliconix TrenchFET P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Si2319DDS-T1-GE3

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Subtotal (1 pack of 50 units)*

£5.25

(exc. VAT)

£6.30

(inc. VAT)

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Packaging Options:
RS Stock No.:
178-3853
Mfr. Part No.:
Si2319DDS-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Width

1.4mm

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Length

3.04mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

1.02mm

Minimum Operating Temperature

-55 °C

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