Vishay Siliconix TrenchFET P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Si2319DDS-T1-GE3

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Subtotal (1 reel of 3000 units)*

£363.00

(exc. VAT)

£435.00

(inc. VAT)

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3000 +£0.121£363.00

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RS Stock No.:
178-3663
Mfr. Part No.:
Si2319DDS-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

3.04mm

Transistor Material

Si

Width

1.4mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

RoHS Status: Exempt

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 75mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• Battery switch
• Load switch
• Motor drive control

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

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