Vishay TrenchFET P-Channel MOSFET, 3.1 A, 20 V, 3-Pin SOT-23 SI2301CDS-T1-E3

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Subtotal (1 reel of 3000 units)*

£315.00

(exc. VAT)

£378.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000£0.105£315.00
6000 +£0.10£300.00

*price indicative

RS Stock No.:
180-7269
Mfr. Part No.:
SI2301CDS-T1-E3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.112 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Number of Elements per Chip

1

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 8V. It has drain-source resistance of 112mohm at a gate-source voltage of 4.5V. It has continuous drain current of 3.1A and maximum power dissipation of 1.6W. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21

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