Vishay P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 SI2301CDS-T1-GE3
- RS Stock No.:
- 710-3238
- Mfr. Part No.:
- SI2301CDS-T1-GE3
- Brand:
- Vishay
Subtotal (1 pack of 20 units)*
£5.14
(exc. VAT)
£6.16
(inc. VAT)
FREE delivery for orders over £50.00
- 360 unit(s) shipping from 08 September 2025
- Plus 420 unit(s) shipping from 08 September 2025
- Plus 2,680 unit(s) shipping from 15 September 2025
Units | Per unit | Per Pack* |
---|---|---|
20 - 180 | £0.257 | £5.14 |
200 - 480 | £0.206 | £4.12 |
500 - 980 | £0.154 | £3.08 |
1000 - 1980 | £0.128 | £2.56 |
2000 + | £0.116 | £2.32 |
*price indicative
Alternative
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Each
£0.37
(exc. VAT)
£0.44
(inc. VAT)
- RS Stock No.:
- 710-3238
- Mfr. Part No.:
- SI2301CDS-T1-GE3
- Brand:
- Vishay
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 2.3 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 112 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 860 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Typical Gate Charge @ Vgs | 3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V | |
Length | 3.04mm | |
Number of Elements per Chip | 1 | |
Width | 1.4mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Height | 1.02mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.3 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 112 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 860 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
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