Vishay TrenchFET N-Channel MOSFET, 9.5 A, 80 V, 8-Pin SO-8 SI4896DY-T1-E3

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Subtotal (1 pack of 5 units)*

£7.44

(exc. VAT)

£8.93

(inc. VAT)

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Per Pack*
5 +£1.488£7.44

*price indicative

Packaging Options:
RS Stock No.:
180-7961
Mfr. Part No.:
SI4896DY-T1-E3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.5 A

Maximum Drain Source Voltage

80 V

Package Type

SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.022 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 16.5mohm at a gate-source voltage of 10V. It has power dissipation of 1.56W and continuous drain current of 6.7A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• Adaptor switch
• Load switches

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21

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