Vishay Siliconix TrenchFET N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 SiSS02DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

£1,233.00

(exc. VAT)

£1,479.00

(inc. VAT)

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Per unit
Per Reel*
3000 +£0.411£1,233.00

*price indicative

RS Stock No.:
178-3698
Mfr. Part No.:
SiSS02DN-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Package Type

1212

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

55 nC @ 10 V

Length

3.15mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

3.15mm

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

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