Vishay Siliconix TrenchFET N-Channel MOSFET, 14.4 A, 250 V, 8-Pin PowerPAK SO-8 Si7190ADP-T1-RE3

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Subtotal 50 units (supplied on a continuous strip)*

£54.50

(exc. VAT)

£65.50

(inc. VAT)

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Units
Per unit
50 - 95£1.09
100 - 495£0.846
500 - 995£0.742
1000 +£0.666

*price indicative

Packaging Options:
RS Stock No.:
178-3875P
Mfr. Part No.:
Si7190ADP-T1-RE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

14.4 A

Maximum Drain Source Voltage

250 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

56.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

5mm

Typical Gate Charge @ Vgs

14.9 nC @ 10 V

Number of Elements per Chip

1

Length

5.99mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.07mm

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package

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