Vishay Siliconix TrenchFET N-Channel MOSFET, 14.4 A, 250 V, 8-Pin PowerPAK SO-8 Si7190ADP-T1-RE3
- RS Stock No.:
- 178-3875
- Mfr. Part No.:
- Si7190ADP-T1-RE3
- Brand:
- Vishay Siliconix
Save 49% when you buy 1000 units
Subtotal (1 pack of 5 units)*
£6.54
(exc. VAT)
£7.85
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 03 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.308 | £6.54 |
| 50 - 95 | £1.09 | £5.45 |
| 100 - 495 | £0.846 | £4.23 |
| 500 - 995 | £0.742 | £3.71 |
| 1000 + | £0.666 | £3.33 |
*price indicative
- RS Stock No.:
- 178-3875
- Mfr. Part No.:
- Si7190ADP-T1-RE3
- Brand:
- Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14.4 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | PowerPAK SO-8 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 56.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 5mm | |
| Number of Elements per Chip | 1 | |
| Length | 5.99mm | |
| Typical Gate Charge @ Vgs | 14.9 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.07mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 14.4 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type PowerPAK SO-8 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 56.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 5mm | ||
Number of Elements per Chip 1 | ||
Length 5.99mm | ||
Typical Gate Charge @ Vgs 14.9 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 1.07mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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