Vishay TrenchFET Dual N-Channel MOSFET, 126 A, 100 V, 8-Pin PowerPAK SO-8 SiR510DP-T1-RE3

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Subtotal (1 reel of 3000 units)*

£2,229.00

(exc. VAT)

£2,676.00

(inc. VAT)

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  • 3,000 unit(s) ready to ship
  • Plus 999,996,000 unit(s) shipping from 11 June 2026
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Per unit
Per Reel*
3000 +£0.743£2,229.00

*price indicative

RS Stock No.:
228-2903
Mfr. Part No.:
SiR510DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

126 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0036 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

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