Vishay TrenchFET Dual N-Channel MOSFET, 126 A, 100 V, 8-Pin PowerPAK SO-8 SiR510DP-T1-RE3

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Subtotal (1 pack of 5 units)*

£10.35

(exc. VAT)

£12.40

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45£2.07£10.35
50 - 120£1.862£9.31
125 - 245£1.656£8.28
250 - 495£1.512£7.56
500 +£1.304£6.52

*price indicative

Packaging Options:
RS Stock No.:
228-2904
Mfr. Part No.:
SiR510DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

126 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0036 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

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