Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3
- RS Stock No.:
- 228-2912
- Mfr. Part No.:
- SiR876BDP-T1-RE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
£11.10
(exc. VAT)
£13.30
(inc. VAT)
FREE delivery for orders over £60.00
Last RS stock
- Final 18,710 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.11 | £11.10 |
| 100 - 240 | £1.045 | £10.45 |
| 250 - 490 | £0.945 | £9.45 |
| 500 - 990 | £0.888 | £8.88 |
| 1000 + | £0.833 | £8.33 |
*price indicative
- RS Stock No.:
- 228-2912
- Mfr. Part No.:
- SiR876BDP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51.4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42.7nC | |
| Maximum Power Dissipation Pd | 71.4W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51.4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42.7nC | ||
Maximum Power Dissipation Pd 71.4W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 100 V MOSFET.
100 % Rg and UIS tested
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