Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3

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Subtotal (1 pack of 10 units)*

£9.03

(exc. VAT)

£10.84

(inc. VAT)

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Being discontinued
  • Final 21,720 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 90£0.903£9.03
100 - 240£0.85£8.50
250 - 490£0.769£7.69
500 - 990£0.723£7.23
1000 +£0.677£6.77

*price indicative

Packaging Options:
RS Stock No.:
228-2912
Mfr. Part No.:
SiR876BDP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

51.4A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

71.4W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42.7nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

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