Vishay TrenchFET N-Channel MOSFET, 330 A, 60 V Enhancement, 8-Pin PowerPAK SIRS4614EPW-T1-RE3
- RS Stock No.:
- 904-978
- Mfr. Part No.:
- SIRS4614EPW-T1-RE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
£2.59
(exc. VAT)
£3.11
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 11 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | £2.59 |
| 10 - 24 | £1.68 |
| 25 - 99 | £1.00 |
| 100 - 499 | £0.97 |
| 500 + | £0.95 |
*price indicative
- RS Stock No.:
- 904-978
- Mfr. Part No.:
- SIRS4614EPW-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 330A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.000995Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 205W | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5mm | |
| Length | 6mm | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 330A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.000995Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 205W | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 5mm | ||
Length 6mm | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay power MOSFET designed for high-efficiency operations, specifically tackling power losses associated with conduction in electronic applications. This component is characterised by its robust construction and durability under varying conditions.
TrenchFET Gen IV technology ensures excellent performance with minimal power loss
Rated for a drain-source voltage of 60 V, providing stability in high-voltage environments
Low on-state resistance maximises efficiency in power management applications
Designed with enhanced power dissipation capabilities for reduced thermal issues
Related links
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SiR186LDP-T1-RE3
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 8-Pin SO-8SW SIRS4600EPW-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 Si7454FDP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR104ADP-T1-RE3