onsemi QFET N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK FQD13N10LTM
- RS Stock No.:
- 166-2636
- Mfr. Part No.:
- FQD13N10LTM
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£530.00
(exc. VAT)
£635.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 27 November 2025
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.212 | £530.00 |
*price indicative
- RS Stock No.:
- 166-2636
- Mfr. Part No.:
- FQD13N10LTM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 10 A | |
Maximum Drain Source Voltage | 100 V | |
Series | QFET | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 180 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 6.6mm | |
Typical Gate Charge @ Vgs | 8.7 nC @ 5 V | |
Width | 6.1mm | |
Height | 2.3mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 100 V | ||
Series QFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.6mm | ||
Typical Gate Charge @ Vgs 8.7 nC @ 5 V | ||
Width 6.1mm | ||
Height 2.3mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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