QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	2.8 A
	Maximum Drain Source Voltage	600 V
	Series	QFET
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	2.5 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	49 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Length	6.73mm
	Typical Gate Charge @ Vgs	15 nC @ 10 V
	Width	6.22mm
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	2.39mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 2.8 A
	Maximum Drain Source Voltage 600 V
	Series QFET
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 2.5 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 49 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Length 6.73mm
	Typical Gate Charge @ Vgs 15 nC @ 10 V
	Width 6.22mm
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 2.39mm

onsemi QFET N-Channel MOSFET, 2.8 A, 600 V, 3-Pin DPAK FQD5N60CTM

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

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