onsemi QFET N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK FQD13N10LTM
- RS Stock No.:
- 671-0952P
- Mfr. Part No.:
- FQD13N10LTM
- Brand:
- onsemi
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£28.30
(exc. VAT)
£33.95
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,390 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 50 - 95 | £0.566 |
| 100 - 495 | £0.492 |
| 500 - 995 | £0.432 |
| 1000 + | £0.392 |
*price indicative
- RS Stock No.:
- 671-0952P
- Mfr. Part No.:
- FQD13N10LTM
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | QFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 6.1mm | |
| Typical Gate Charge @ Vgs | 8.7 nC @ 5 V | |
| Length | 6.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 2.3mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 100 V | ||
Series QFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 6.1mm | ||
Typical Gate Charge @ Vgs 8.7 nC @ 5 V | ||
Length 6.6mm | ||
Maximum Operating Temperature +150 °C | ||
Height 2.3mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
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Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
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ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.