onsemi QFET N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK FQD13N10TM
- RS Stock No.:
- 671-0961
- Mfr. Part No.:
- FQD13N10TM
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£0.98
(exc. VAT)
£1.175
(inc. VAT)
FREE delivery for orders over £50.00
- Final 2,670 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 + | £0.196 | £0.98 |
*price indicative
- RS Stock No.:
- 671-0961
- Mfr. Part No.:
- FQD13N10TM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 10 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | DPAK (TO-252) | |
Series | QFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 180 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Number of Elements per Chip | 1 | |
Length | 6.6mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
Transistor Material | Si | |
Width | 6.1mm | |
Height | 2.3mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series QFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Length 6.6mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Transistor Material Si | ||
Width 6.1mm | ||
Height 2.3mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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