onsemi QFET N-Channel MOSFET, 9 A, 200 V, 3-Pin DPAK FQD12N20LTM
- RS Stock No.:
- 124-1718
- Mfr. Part No.:
- FQD12N20LTM
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£650.00
(exc. VAT)
£775.00
(inc. VAT)
FREE delivery for orders over £50.00
- 2,500 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.26 | £650.00 |
*price indicative
- RS Stock No.:
- 124-1718
- Mfr. Part No.:
- FQD12N20LTM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 9 A | |
Maximum Drain Source Voltage | 200 V | |
Series | QFET | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 280 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Length | 6.6mm | |
Typical Gate Charge @ Vgs | 16 nC @ 5 V | |
Maximum Operating Temperature | +150 °C | |
Width | 6.1mm | |
Transistor Material | Si | |
Height | 2.3mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 200 V | ||
Series QFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 6.6mm | ||
Typical Gate Charge @ Vgs 16 nC @ 5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 6.1mm | ||
Transistor Material Si | ||
Height 2.3mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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