QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	1.6 A
	Maximum Drain Source Voltage	1000 V
	Package Type	DPAK (TO-252)
	Series	QFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	9 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Typical Gate Charge @ Vgs	12 nC @ 10 V
	Width	6.1mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Length	6.6mm
	Number of Elements per Chip	1
	Height	2.3mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 1.6 A
	Maximum Drain Source Voltage 1000 V
	Package Type DPAK (TO-252)
	Series QFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 9 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Typical Gate Charge @ Vgs 12 nC @ 10 V
	Width 6.1mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Length 6.6mm
	Number of Elements per Chip 1
	Height 2.3mm
	Minimum Operating Temperature -55 °C

onsemi QFET N-Channel MOSFET, 1.6 A, 1000 V, 3-Pin DPAK FQD2N100TM

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

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