onsemi QFET N-Channel MOSFET, 1.6 A, 1000 V, 3-Pin DPAK FQD2N100TM

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
671-0999
Mfr. Part No.:
FQD2N100TM
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

1000 V

Series

QFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Length

6.6mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

12 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.3mm

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Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
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