onsemi QFET N-Channel MOSFET, 8 A, 1000 V, 3-Pin TO-3PN FQA8N100C
- RS Stock No.:
- 146-1970
- Mfr. Part No.:
- FQA8N100C
- Brand:
- onsemi
Subtotal (1 tube of 30 units)*
£71.70
(exc. VAT)
£86.10
(inc. VAT)
FREE delivery for orders over £50.00
- 1,200 left, ready to ship
Units | Per unit | Per Tube* |
---|---|---|
30 - 30 | £2.39 | £71.70 |
60 - 120 | £2.318 | £69.54 |
150 - 270 | £2.246 | £67.38 |
300 + | £2.151 | £64.53 |
*price indicative
- RS Stock No.:
- 146-1970
- Mfr. Part No.:
- FQA8N100C
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 1000 V | |
Package Type | TO-3PN | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.45 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 225 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Length | 15.8mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 53 nC @ 10 V | |
Width | 5mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 18.9mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 1000 V | ||
Package Type TO-3PN | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.45 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 225 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 15.8mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 53 nC @ 10 V | ||
Width 5mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 18.9mm | ||
- COO (Country of Origin):
- CN
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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