onsemi QFET N-Channel MOSFET, 23 A, 600 V, 3-Pin TO-3PN FQA24N60
- RS Stock No.:
- 145-5360
- Mfr. Part No.:
- FQA24N60
- Brand:
- onsemi
Subtotal (1 tube of 30 units)*
£114.63
(exc. VAT)
£137.55
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 08 January 2026
Units | Per unit | Per Tube* |
---|---|---|
30 - 30 | £3.821 | £114.63 |
60 + | £3.592 | £107.76 |
*price indicative
- RS Stock No.:
- 145-5360
- Mfr. Part No.:
- FQA24N60
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 23 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-3PN | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 240 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 310 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Width | 5mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Length | 15.8mm | |
Typical Gate Charge @ Vgs | 110 nC @ 10 V | |
Minimum Operating Temperature | -55 °C | |
Height | 18.9mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-3PN | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 240 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 15.8mm | ||
Typical Gate Charge @ Vgs 110 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 18.9mm | ||
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi QFET N-Channel MOSFET 600 V, 3-Pin TO-3PN FQA24N60
- onsemi QFET N-Channel MOSFET 100 V, 3-Pin TO-3PN FQA140N10
- onsemi QFET N-Channel MOSFET 100 V, 3-Pin TO-3PN FQA70N10
- onsemi QFET N-Channel MOSFET 300 V, 3-Pin TO-3PN FQA44N30
- onsemi QFET N-Channel MOSFET 250 V, 3-Pin TO-3PN FQA40N25
- onsemi QFET N-Channel MOSFET 1000 V, 3-Pin TO-3PN FQA8N100C
- onsemi QFET N-Channel MOSFET 600 V, 3-Pin TO-92 FQN1N60CTA
- onsemi QFET N-Channel MOSFET 600 V, 3-Pin DPAK FQD5N60CTM