onsemi QFET N-Channel MOSFET, 23 A, 600 V, 3-Pin TO-3PN FQA24N60

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Subtotal (1 tube of 30 units)*

£114.63

(exc. VAT)

£137.55

(inc. VAT)

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Temporarily out of stock
  • 450 unit(s) shipping from 24 December 2025
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Units
Per unit
Per Tube*
30 - 30£3.821£114.63
60 +£3.592£107.76

*price indicative

RS Stock No.:
145-5360
Mfr. Part No.:
FQA24N60
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

600 V

Package Type

TO-3PN

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

310 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

110 nC @ 10 V

Length

15.8mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

18.9mm

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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