onsemi QFET Type N-Channel MOSFET, 40 A, 250 V Enhancement, 3-Pin TO-3PN

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Subtotal (1 tube of 30 units)*

£47.22

(exc. VAT)

£56.67

(inc. VAT)

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30 +£1.574£47.22

*price indicative

RS Stock No.:
145-5361
Mfr. Part No.:
FQA40N25
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-3PN

Series

QFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

85nC

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

280W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5 mm

Standards/Approvals

No

Height

18.9mm

Length

15.8mm

Automotive Standard

No

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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