onsemi QFET N-Channel MOSFET, 40 A, 250 V, 3-Pin TO-3PN FQA40N25
- RS Stock No.:
- 145-5361
- Mfr. Part No.:
- FQA40N25
- Brand:
- onsemi
Subtotal (1 tube of 30 units)*
£59.01
(exc. VAT)
£70.80
(inc. VAT)
FREE delivery for orders over £50.00
- 420 unit(s) ready to ship
Units | Per unit | Per Tube* |
---|---|---|
30 + | £1.967 | £59.01 |
*price indicative
- RS Stock No.:
- 145-5361
- Mfr. Part No.:
- FQA40N25
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 40 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | TO-3PN | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 70 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 280 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Length | 15.8mm | |
Typical Gate Charge @ Vgs | 85 nC @ 10 V | |
Width | 5mm | |
Height | 18.9mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-3PN | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 280 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 15.8mm | ||
Typical Gate Charge @ Vgs 85 nC @ 10 V | ||
Width 5mm | ||
Height 18.9mm | ||
Minimum Operating Temperature -55 °C | ||
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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