onsemi QFET N-Channel MOSFET, 40 A, 250 V, 3-Pin TO-3PN FQA40N25
- RS Stock No.:
- 671-4941
- Mfr. Part No.:
- FQA40N25
- Brand:
- onsemi
Subtotal (1 unit)*
£3.35
(exc. VAT)
£4.02
(inc. VAT)
FREE delivery for orders over £50.00
- 436 unit(s) ready to ship
Units | Per unit |
---|---|
1 - 9 | £3.35 |
10 + | £2.89 |
*price indicative
- RS Stock No.:
- 671-4941
- Mfr. Part No.:
- FQA40N25
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 40 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | TO-3PN | |
Series | QFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 70 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 280 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Typical Gate Charge @ Vgs | 85 nC @ 10 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 15.8mm | |
Maximum Operating Temperature | +150 °C | |
Width | 5mm | |
Minimum Operating Temperature | -55 °C | |
Height | 18.9mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-3PN | ||
Series QFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 280 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 85 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 15.8mm | ||
Maximum Operating Temperature +150 °C | ||
Width 5mm | ||
Minimum Operating Temperature -55 °C | ||
Height 18.9mm | ||
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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